---
格式版本: 2
标题: "Characterisation of Commercially Available NUV-MT Silicon Photomultipliers"
原文链接: "https://arxiv.org/abs/2608.19156"
发布日期: "2026-08-19"
发布时间校准状态: "found"
发布时间需复核: "否"
发布时间来源: "rule:local:strict_original_body"
发布时间证据: "**\\[v1\\]** Wed, 19 Aug 2026 17:41:17 UTC (456 KB)"
发布时间校准原因: "规则确认唯一严格发布时间，来源 local:strict_original_body"
发布时间校准置信度: "high"
发布时间候选数量: 18
发布时间严格候选数量: 6
发布时间原页读取状态: "source template page reused from URL open"
发布时间未找到原因: ""
发布时间校准时间: "2026-08-20T14:49:48+08:00"
发布时间仲裁状态: "skipped"
发布时间仲裁尝试次数: 0
发布时间仲裁耗时毫秒: 0
发现时间: "2026-08-20T14:49:03+08:00"
入库时间: "2026-08-20T06:49:48.788Z"
来源平台: "arXiv 学术论文搜索"
搜索渠道: "source_template"
搜索词: "https://arxiv.org/search/?query=Broadcom&searchtype=all"
匹配关键词:
  - "performance"
相关厂家:
  - "Broadcom"
相关专家:
  []
内容类型: "网页"
抓取工具: "Free Fetch + Defuddle"
清洗工具: "Defuddle Markdown + Defuddle/Readability 正文提取"
原始附件:
  []
AI优质: "否"
AI打分: 0
AI分档: "非优质"
AI质检状态: "不通过"
AI打分理由: "该arXiv论文为物理探测用硅光电倍增管特性研究，虽涉及Broadcom器件但属粒子物理仪器领域，与超节点/AI Rack/机柜级AI基础设施完全无关。"
AI质检模型: "ali-deepseek-v4-flash"
AI质检时间: "2026-08-20T14:51:35+08:00"
AI主题相关性: 0
AI来源权威性: 0
AI新颖性: 0
AI技术细节: 0
AI商业部署信号: 0
AI完整性: 0
AI摘要: "该研究系统表征了商用Broadcom AFBR-S4N系列NUV-MT硅光电倍增管，在-85°C至23°C和10-16V过电压下测量击穿电压、增益、暗计数率、串扰等关键参数；"
AI摘要模型: "ali-deepseek-v4-flash"
AI摘要时间: "2026-09-07T03:18:32.409Z"
采集批次: "2026年8月20日14点19分32秒"
采集批次ID: "20260820-141932-079"
去重键: "https://arxiv.org/abs/2608.19156"
---

## Physics > Instrumentation and Detectors

## Title:Characterisation of Commercially Available NUV-MT Silicon Photomultipliers

Authors:[T. Avgitas](https://arxiv.org/search/physics?searchtype=author&query=Avgitas,+T), [Z. Balmforth](https://arxiv.org/search/physics?searchtype=author&query=Balmforth,+Z), [I. Manthos](https://arxiv.org/search/physics?searchtype=author&query=Manthos,+I), [K. Nikolopoulos](https://arxiv.org/search/physics?searchtype=author&query=Nikolopoulos,+K), [C. Toukmenidis](https://arxiv.org/search/physics?searchtype=author&query=Toukmenidis,+C)

[View PDF](https://arxiv.org/pdf/2608.19156) [HTML (experimental)](https://arxiv.org/html/2608.19156v1)

> Abstract:Silicon Photomultipliers (SiPMs) based on NUV-MT technology offer improved photo-detection efficiency and reduced correlated noise compared to earlier designs, making them increasingly attractive for particle and astroparticle physics applications. We present a systematic characterisation of commercially available Broadcom AFBR-S4N series NUV-MT SiPMs over a wide range of temperatures and overvoltages, from -85oC to 23oC and from 10-16V overvoltage (VoV). Key performance parameters are measured, including breakdown voltage, gain, signal-to-noise ratio, dark count rate, afterpulsing probability, and both internal and external optical crosstalk. At 12Vov and 23oC a dark noise of 107.2+/-2.1 kcps/mm^2 is measured, consistent with manufacturer specifications. At 12Vov and -30oC the measurements yielded an average dark noise of 1.69+/-0.12 kcps/mm^2, an average gain of (6.88+/-0.15)x10^6, an average signal to noise ratio of 13.6+/-0.9, an average afterpulsing probability of (0.59+/-0.06)%, an average direct crosstalk probability of (26.49+/-0.28)%, an average delayed crosstalk probability of (0.72+/-0.10)%, and an average external crosstalk probability of (0.10+/-0.04)%.

| Comments: |  |
| --- | --- |
| Subjects: | Instrumentation and Detectors (physics.ins-det) |
| Cite as: | [arXiv:2608.19156](https://arxiv.org/abs/2608.19156) \[physics.ins-det\] |
|  | (or [arXiv:2608.19156v1](https://arxiv.org/abs/2608.19156v1) \[physics.ins-det\] for this version) |
|  | [https://doi.org/10.48550/arXiv.2608.19156](https://doi.org/10.48550/arXiv.2608.19156) |

## Submission history

From: Konstantinos Nikolopoulos \[[view email](https://arxiv.org/show-email/6f3d7e9b/2608.19156)\]  
**\[v1\]** Wed, 19 Aug 2026 17:41:17 UTC (456 KB)

[Which authors of this paper are endorsers?](https://arxiv.org/auth/show-endorsers/2608.19156) | Disable MathJax ([What is MathJax?](https://info.arxiv.org/help/mathjax.html))