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# ST Targets Nvidia's 800V AI Data Center Power Architecture

## Preparing SiC and GaN in line with 800 VDC

* Lee Jun * UPDATE 2026.05.23 21:32 __ Published 2026.05.17 20:47

![Hiroshi Noguchi, Executive Vice President of Sales and Marketing for Asia Pacific excluding China \(APeC\) at STMicroelectronics. \(Photo: STMicroelectronics\)](https://cdn.thelec.net/news/photo/202605/10528_10485_1134.jpg)

STMicroelectronics (ST), a European semiconductor manufacturer, said it is preparing products aligned with Nvidia's next-generation 800 VDC power architecture for AI data centers as global electricity demand from artificial intelligence infrastructure surges.

Hiroshi Noguchi, executive vice president of sales and marketing for Asia Pacific excluding China (APeC) at ST, said during a press briefing held at COEX in Seoul on May 15 that the company is ready to respond when the market adopts 800 VDC infrastructure.

"We are capable of responding at the right time when the market requires 800 VDC-related products," Noguchi said. "1200V SiC devices play a key role in controlling power on the 800V DC bus line."

According to the International Energy Agency (IEA), global data center electricity demand is projected to more than double by 2030 compared with 2024 levels, reaching 945 terawatt-hours (TWh). That would exceed South Korea's annual electricity consumption of roughly 600 TWh.

In the United States, where major global technology companies are concentrated, data centers are expected to account for half of total electricity demand by 2030.

As power demand from data centers rises, efficient power management technologies are emerging as critical solutions, with 800 VDC considered one of the leading approaches.

Conventional data centers supply power through multiple conversion stages. High-voltage alternating current entering a facility is first stepped down at substations before being converted to 54V direct current by power supply units inside server racks. The voltage is then reduced again to 12V before reaching voltage regulator modules that supply GPUs with less than 1V. Each voltage conversion stage creates energy loss and heat generation, reducing overall efficiency.

![Comparison of data center power delivery architectures in 2025 and 2027. In current systems, incoming AC power undergoes multiple conversion stages through various devices. Nvidia’s proposed future architecture converts AC power directly into 800V DC and delivers it to server racks with fewer conversion steps, reducing energy loss. \(Source: Nvidia\)](https://cdn.thelec.net/news/photo/202605/10528_10486_1251.jpg)

Nvidia's 800 VDC architecture aims to deliver high-voltage direct current directly to server racks, reducing the number of conversion stages required before power reaches GPUs. The approach lowers conversion losses, reduces heat generation and cuts the size of electrical wiring and rack-mounted power supply units.

SiC and GaN semiconductors play a central role in this structure, particularly in DC-DC converters that lower voltage from 800V to around 6V.

SiC and GaN are compound semiconductors made from multiple elements. Compared with conventional silicon, they provide greater stability under high-voltage and high-temperature conditions and can simplify power conversion processes.

While silicon remains dominant in servers because of cost advantages, broader adoption of SiC and GaN is expected as prices decline.

Noguchi said ST has developed SiC technology capable of lowering AC power to 50V while supporting voltages above 1,200V. He added that the company's GaN technology, responsible for high-frequency switching in power conversion, can operate at 800V and 1MHz in prototype form while achieving 98% efficiency and a power density of 2,600W per cubic inch.

Alongside its existing 800V-to-50V solution, ST recently added new 800V-to-12V and 800V-to-6V product families.

SiC is generally more effective in environments above 1,200V, while GaN delivers higher efficiency at lower voltages. In a typical system architecture, SiC first reduces voltage from 800V, after which GaN lowers it further into single-digit voltage ranges.

GaN also enables smaller module designs. For example, it can directly reduce 48V input to 1V, eliminating one conversion stage compared with silicon-based solutions and reducing component size.

"GaN-based solutions help reduce footprint size and enable the development of more efficient devices," Noguchi said.

ST also said it possesses digital power design and manufacturing capabilities used to control power conversion systems. Noguchi said the company can provide customized designs at the packaging level, including analog and mixed-signal power technologies.

"We implemented a 6V bus directly near GPUs to reduce conversion stages and minimize power loss," he added.

Nvidia expects adoption of 800 VDC architecture to expand beginning in 2027, when shipments of its internally designed Kyber rack-scale systems ramp up. The Kyber system connects 576 Rubin Ultra GPUs and consists of 18 compute blades within a single rack.

[Lee Jun](https://www.thelec.net/news/articleList.html?sc_area=I&sc_word=2jun0504&view_type=sm) [2jun0504@thelec.kr](mailto:2jun0504@thelec.kr)
